VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 1 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ultrafast rectifier, 2 x 40 a fred pt ? features ? ultrafast recovery time ? low forward voltage drop ? low leakage current ? 175 c operating junction temperature ? compliant to rohs directive 2002/95/ec ? designed and qualified according to jedec-jesd47 ? halogen-free according to iec 61249-2-21 definition (-n3 only) descriptions/applications vs-80cpu02... series are the state of the art ultrafast recovery rectifiers designed with optimized performance of forward voltage drop and ul trafast recovery time. the planar structure and the pl atinum doped life time control guarantee the best overall performance, ruggedness and reliability characteristics. these devices are intended for use in the output rectification stage of welding, smps, ups, dc/dc converters as well as freewheeling diodes in low voltage inverters and chopper motor drives. their extremely optimized stored charge and low recovery current minimize the switch ing losses and reduce over dissipation in the switch ing element and snubbers. product summary package to-247ac i f(av) 2 x 40 a v r 200 v v f at i f 1.02 v t rr typ. 34 ns t j max. 175 c diode variation common cathode base common cathode common cathode 2 2 13 anode 1 anode 2 to-247ac absolute maximum ratings parameter symbol test conditions max. units repetitive peak reverse voltage v rrm 200 v average rectified forward current per leg i f(av) t c = 145 c 40 a total device 80 non-repetitive peak surge current per leg i fsm t j = 25 c 330 operating junction and storage temperatures t j , t stg - 65 to 175 c electrical specifications (t j = 25 c unless otherwise specified) parameter symbol test condit ions min. typ. max. units breakdown voltage, blocking voltage v br , v r i r = 100 a 200 - - v forward voltage v f i f = 40 a - 0.94 1.02 i f = 40 a, t j = 150 c - 0.80 0.90 i f = 80 a - 1.07 1.20 i f = 80 a, t j = 150 c - 0.97 1.08 reverse leakage current i r v r = v r rated - - 5 a t j = 150 c, v r = v r rated - - 500 junction capacitance c t v r = 200 v - 120 - pf series inductance l s measured lead to lead 5 mm from package body - 3.5 - nh
VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 2 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 dynamic recovery characteristics (t j = 25 c unless otherwise specified) parameter symbol test conditions min. typ. max. units reverse recovery time t rr i f = 1.0 a, di f /dt = 100 a/s, v r = 30 v - 34 - ns t j = 25 c i f = 40 a di f /dt = - 200 a/s v r = 200 v -33- t j = 125 c - 54 - peak recovery current i rrm t j = 25 c - 3.4 - a t j = 125 c - 8 - reverse recovery charge q rr t j = 25 c - 56 - nc t j = 125 c - 216 - thermal - mechanical specifications parameter symbol test conditions min. typ. max. units maximum junction and storage temperature range t j , t stg - 65 - 175 c thermal resistance, junction to case per leg r thjc - 0.46 0.70 c/w thermal resistance, junction to ambient per leg r thja typical socket mount - - 40 thermal resistance, case to heatsink r thcs mounting surface, flat, smooth and greased - 0.3 - weight -6.0- g -0.21- oz. mounting torque 6.0 (5.0) - 12 (10) kgf ?? cm (lbf ?? in) marking device case style to-247ac 80cpu02
VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 3 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 1 - typical forward voltage drop characteristics fig. 2 - typical values of reverse current vs. reverse voltage fig. 3 - typical junction ca pacitance vs. reverse voltage fig. 4 - maximum thermal impedance z thjc characteristics i f - instantaneous forward current (a) v f - forward voltage drop (v) 0.3 0.6 0.9 1.5 1.2 1.8 1 1000 100 10 93457_01 t j = 175 c t j = 125 c t j = 25 c i r - reverse current (ma) v r - reverse voltage (v) 0 50 100 150 200 0.0001 0.001 0.01 0.1 1 10 100 1000 93457_02 t j = 125 c t j = 175 c t j = 150 c t j = 100 c t j = 75 c t j = 50 c t j = 25 c c t - junction capacitance (pf) v r - reverse voltage (v) 0 50 100 150 200 100 1000 93457_03 0.001 0.01 0.1 10 1 0.00001 93457_04 0.0001 0.001 0.01 0.1 t 1 - rectangular pulse duration (s) z thjc - thermal impedance (c/w) 1 s ingle pul s e (thermal re s i s tance) d = 0.50 d = 0.20 d = 0.10 d = 0.05 d = 0.02 d = 0.01
VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 4 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 5 - maximum allowable case temperature vs. average forward current fig. 6 - forward power loss characteristics fig. 7 - typical reverse recovery time vs. di f /dt fig. 8 - typical stored charge vs. di f /dt note (1) formula used: t c = t j - (pd + pd rev ) x r thjc ; pd = forward power loss = i f(av) x v fm at (i f(av) /d) (see fig. 6); pd rev = inverse power loss = v r1 x i r (1 - d); i r at v r1 = rated v r allowable case temperature (c) i f(av) - average forward current (a) 40 30 20 10 50 60 0 140 180 110 120 130 160 150 170 sq uare wave (d = 0.50) rated v r applied s ee note (1) 93457_05 dc average power loss (w) i f(av) - average forward current (a) 40 50 30 20 10 60 0 93457_06 60 70 0 20 40 30 50 10 rm s limit d = 0.01 d = 0.02 d = 0.05 d = 0.10 d = 0.20 d = 0.50 dc t rr (ns) di f /dt (a/s) 100 93457_07 1000 10 80 30 50 70 20 40 60 average value s i f = 40 a, t j = 25 c i f = 40 a, t j = 125 c q rr (nc) di f /dt (a/s) 100 93457_08 1000 0 600 300 500 100 400 200 i f = 40 a, t j = 25 c i f = 40 a, t j = 125 c
VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 5 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 fig. 9 - reverse recovery parameter test circuit fig. 9 - reverse recovery waveform and definitions irfp250 d.u.t. l = 70 h v r = 200 v 0.01 g d s di f /dt adju s t q rr 0.5 i rrm di (rec)m /dt 0.75 i rrm i rrm t rr t b t a i f di f /dt 0 (1) (2) (3) (4) (5) (1) di f /dt - rate of change of current through zero cro ss ing (2) i rrm - peak rever s e recovery current (3) t rr - rever s e recovery time mea s ured from zero cro ss ing point of negative going i f to point where a line pa ss ing through 0.75 i rrm and 0.50 i rrm extrapolated to zero current. (4) q rr - area under curve dened by t rr and i rrm t rr x i rrm 2 q rr = (5) di (rec)m /dt - peak rate of change of current during t b portion of t rr
VS-80CPU02-F3, vs-80cpu02-n3 www.vishay.com vishay semiconductors revision: 30-sep-11 6 document number: 93457 for technical questions within your region: diodesamericas@vishay.com , diodesasia@vishay.com , diodeseurope@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 ordering information table ordering information (example) preferred p/n quantity per tube minimum order quantity packaging description VS-80CPU02-F3 25 500 antistatic plastic tube vs-80cpu02-n3 25 500 antistatic plastic tube links to related documents dimensions www.vishay.com/doc?95223 part marking www.vishay.com/doc?95007 1 - vishay semiconductors product 2 - current rating (80 = 80 a) 4 - p = to-247ac 5 - u = ultrafast rectifier - voltage rating (02 = 200 v) 6 - environmental digit: -f3 = rohs compliant and totally lead (pb)-free 7 - circuit configuration: c = common cathode 3 device code 5 1 3 2 4 6 7 vs- 80 c p u 02 -f3 -n3 = halogen-free, rohs compliant and totally lead (pb)-free
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